| PART |
Description |
Maker |
| APT6010B2LL APT6010LLL APT6010LLLG APT6010B2LLG |
54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 MOSFET
|
Microsemi Corporation
|
| IRFR9210N IRFRU9120N IRFU9120N FR9120N |
P Channel Surface Mount HEXFET Power MOSFET(P娌??琛ㄨ创??EXFET???MOS?烘?搴??)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.6A) 功率MOSFET（减振钢板基本\u003d- 100V的，的Rds（on）\u003d 0.48ohm，身份证\u003d- 6.6A
P Channel Straight Lead HEXFET Power MOSFET(P沟道HEXFET功率MOS场效应管) P通道直铅HEXFET功率MOSFET的性（P沟道的HEXFET功率马鞍山场效应管）
P Channel Straight Lead HEXFET Power MOSFET(P娌??HEXFET???MOS?烘?搴??)
|
IRF
International Rectifier, Corp.
|
| 2SK2484 |
Nch power MOSFET MP-25 900V/5A
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| 2SK2487 2SK2487-A |
8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| NP48N055KLE NP48N055KLE-E1-AY NP48N055KLE-E2-AY NP |
48 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
|
NEC Corp.
|
| NP80N06NLG NP80N06NLG-S18-AY NP80N06PLG NP80N06PLG |
MOS FIELD EFFECT TRANSISTOR
80 A, 60 V, 0.0083 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN
SWITCHING N-CHANNEL POWER MOS FET
|
Renesas Electronics Corporation
Yuasa Battery, Inc.
|
| NP109N04PUJ NP109N04PUJ-E1B-AY NP109N04PUJ-E2B-AY |
MOS FIELD EFFECT TRANSISTOR
110 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN
SWITCHING N-CHANNEL POWER MOS FET
|
Renesas Electronics Corporation
|
| STH15NA50 STH15NA50FI STW15NA50 STH15NA50_FI |
N-CHANNEL Power MOS MOSFET
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| APT20M22LVFR APT20M22LVFRG |
Power FREDFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
| 2SJ603-S 2SJ603-ZJ 2SJ603-Z-AZ |
25 A, 60 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET
MOS FIELD EFFECT TRANSISTOR MOS场效应管
Pch power MOSFET 60V RDS(on)MAX=48m ohm TO-220AB,TO-262,TO-263
|
NEC, Corp.
NEC Corp.
|
| IRF530 IRF532FI IRF531FI IRF533FI IRF531 IRF530FI |
N-channel MOSFET, 80V, 9A
N-CHANNEL 100V - 0.115 W - 14A TO-220 LOW GATE CHARGE STripFET⑩ II POWER MOSFET
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
N-CHANNEL 100V - 0.115 W - 14A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
